spp15p10pl g spd15p10pl g sipmos ? power-transistor features ? p-channel ? enhancement mode ? logic level ? avalanche rated ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current i d,pulse t c =25 c avalanche energy, single pulse e as i d =-15 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c esd class soldering temperature iec climatic category; din iec 68-1 55/175/56 -55 ... 175 20 260 c 1c (1kv to 2kv) -15 11.3 128 value 230 -60 v ds -100 v r ds(on),max 0.20 ? i d -15 a product summary pg-to252-3 pg-to220-3 type package marking lead free packing tape and reel information spp15p10pl g pg-to220-3 15p10pl yes non dry 50 pcs / tube spd15p10pl g pg-to252-3 15p10pl yes non dry 1000 pcs / reel rev 1.3 page 1 2009-10-27
spp15p10pl g spd15p10pl g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point r thjc - - 1.17 k/w thermal resistance, junction - ambient r thja minimal footprint, steady state --75 6 cm 2 cooling area 1) , steady state --45 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 ma -100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =- 1.54 ma -1 -1.5 -2 zero gate voltage drain current i dss v ds =-100 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-100 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-9.7 a - 190 270 m ? v gs =-10 v, i d =-11.3 a - 140 200 m ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-11.3 a 5.5 11.0 - s 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values rev 1.3 page 2 2009-10-27
spp15p10pl g spd15p10pl g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1120 1490 pf output capacitance c oss - 272 362 reverse transfer capacitance c rss - 120 180 turn-on delay time t d(on) - 7.6 11 ns rise time t r -2131 turn-off delay time t d(off) -5075 fall time t f -2944 gate char g e characteristics 2) gate to source charge q gs - 4.3 5.7 nc gate to drain charge q gd -1726 gate charge total q g -4762 gate plateau voltage v plateau - 4.0 - v reverse diode diode continuous forward current i s - - -15 a diode pulse current i s,pulse - - -60 diode forward voltage v sd v gs =0 v, i f =-15 a, t j =25 c - -0.96 -1.35 v reverse recovery time t rr - 110 165 ns reverse recovery charge q rr - 450 675 nc 2) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-50 v, v gs =- 10 v, i d =-15 a, r g =6 ? v dd =-80 v, i d =-15 a, v gs =0 to -10 v v r =50 v, i f =| i s |, d i f /d t =100 a/s rev 1.3 page 3 2009-10-27
spp15p10pl g spd15p10pl g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); | v gs | 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjs [k/w] 0 20 40 60 80 100 120 140 0 40 80 120 160 t a [c] p tot [w] 0 4 8 12 16 0 40 80 120 160 t a [c] -i d [a] rev 1.3 page 4 2009-10-27
spp15p10pl g spd15p10pl g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -2.5 v -3 v -3.5 v -4.5 v -6 v -8 v -10 v 100 200 300 400 500 0102030 -i d [a] r ds(on) [m ? ] 25 c 125 c 0 5 10 15 20 25 30 12345 -v gs [v] -i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 -i d [a] g fs [s] -2.5 v -3 v -3.5 v -4.5 v -6 v -8 v -10 v - 0 5 10 15 20 25 30 35 40 0246810 -v ds [v] -i d [a] rev 1.3 page 5 2009-10-27
spp15p10pl g spd15p10pl g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-11.3 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-1.54 ma 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 0 100 200 300 400 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] ciss coss crss 10 3 10 2 10 1 0 20406080 -v ds [v] c [pf] typ. min. max. 0 1 2 3 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 175 c, typ 25 c, 98% 175 c, 98% 10 2 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 -v sd [v] i f [a] rev 1.3 page 6 2009-10-27
spp15p10pl g spd15p10pl g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-15 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-1ma 90 95 100 105 110 115 120 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] -i av [a] 20 v 50 v 80 v 0 2 4 6 8 10 0 1020304050 - q gate [nc] - v gs [v] rev 1.3 page 7 2009-10-27
spp15p10pl g spd15p10pl g package outline: pg-to-252-3 rev 1.3 page 8 2009-10-27
spp15p10pl g spd15p10pl g pg-to220-3: outline rev 1.3 page 9 2009-10-27
spp15p10pl g spd15p10pl g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev 1.3 page 10 2009-10-27
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